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SOT1118
Discrete Semiconductor Products

PMDPB85UPE,115

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Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

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SOT1118
Discrete Semiconductor Products

PMDPB85UPE,115

Active
Nexperia USA Inc.

20 V DUAL P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB85UPE,115
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]8.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]514 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]515 mW
Rds On (Max) @ Id, Vgs103 mOhm
Supplier Device Package6-HUSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
Digi-Reel® 1$ 0.46
N/A 0$ 0.21
Tape & Reel (TR) 3000$ 0.15
6000$ 0.14
9000$ 0.13
30000$ 0.13

Description

General part information

PMDPB85UPE Series

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.