
Discrete Semiconductor Products
VS-8ETU04-1-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO262AA

Discrete Semiconductor Products
VS-8ETU04-1-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO262AA
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-8ETU04-1-M3 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Reverse Recovery Time (trr) | 60 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-262AA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 0.74 | |
| 100 | $ 0.54 | |||
| 250 | $ 0.52 | |||
| 500 | $ 0.45 | |||
| 1250 | $ 0.38 | |||
| 2500 | $ 0.34 | |||
| 5000 | $ 0.32 | |||
Description
General part information
8ETU04 Series
Diode 400 V 8A Through Hole TO-262AA
Documents
Technical documentation and resources