Specification	FQPF11P06

Current - Continuous Drain (Id) @ 25°C	8.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQPF11N50CF Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 11 A, 550 mΩ, TO-220F

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQPF11N40C	-55 °C	150 °C	4 V	35 nC	30 V	Through Hole	44 W	TO-220-3 Full Pack	10.5 A	MOSFET (Metal Oxide)	10 V	TO-220F-3	530 mOhm	N-Channel	400 V	1090 pF
ON Semiconductor FQPF11P06	-55 °C	175 ░C	4 V		25 V	Through Hole		TO-220-3 Full Pack	8.6 A	MOSFET (Metal Oxide)	10 V	TO-220F-3	175 mOhm	P-Channel	60 V	550 pF	17 nC
ON Semiconductor FQPF11N50CF	-55 °C	150 °C	4 V		30 V	Through Hole	48 W	TO-220-3 Full Pack	11 A	MOSFET (Metal Oxide)	10 V	TO-220F-3	550 mOhm	N-Channel	500 V	2055 pF	55 nC
ON Semiconductor FQPF11N50CF	-55 °C	150 °C	4 V		30 V	Through Hole	48 W	TO-220-3 Full Pack	11 A	MOSFET (Metal Oxide)	10 V	TO-220F-3	550 mOhm	N-Channel	500 V	2055 pF	55 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQPF11N50CF Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..