Discrete Semiconductor Products

TK5P60W5,RVQ

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MOSFETS PB-F POWER MOSFET TRANSISTOR DPAK(OS) PD=60W F=1MHZ

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Discrete Semiconductor Products

Active

MOSFETS PB-F POWER MOSFET TRANSISTOR DPAK(OS) PD=60W F=1MHZ

Technical Specifications

Parameters and characteristics for this part

Specification	TK5P60W5,RVQ

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	370 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	990 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK5P60W5,RVQ	MOSFET (Metal Oxide)	60 W	11.5 nC	4.5 A	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	10 V	Surface Mount	370 pF	150 °C	30 V	990 mOhm	N-Channel	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 4.5A (Ta) 60W (Tc) Surface Mount DPAK

Technical documentation and resources