Discrete Semiconductor Products
VS-65EPS16L-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 65A TO247AD
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Discrete Semiconductor Products
VS-65EPS16L-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 65A TO247AD
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-65EPS16L-M3 |
|---|---|
| Current - Average Rectified (Io) | 65 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-2 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-247AD |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.17 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.25 | |
| 25 | $ 3.37 | |||
| 100 | $ 2.89 | |||
| 500 | $ 2.57 | |||
| 1000 | $ 2.20 | |||
| 2000 | $ 2.07 | |||
| 5000 | $ 1.99 | |||
Description
General part information
65EPS16 Series
Diode 1600 V 65A Through Hole TO-247AD
Documents
Technical documentation and resources