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TO-252-3
Discrete Semiconductor Products

NGD8209NT4G

Obsolete

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TO-252-3
Discrete Semiconductor Products

NGD8209NT4G

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNGD8209NT4G
Current - Collector (Ic) (Max) [Max]12 A
Current - Collector Pulsed (Icm)30 A
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]94 W
Supplier Device PackageTO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]445 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NGD8209NT4G Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources

No documents available