
Discrete Semiconductor Products
NGD8209NT4G
ObsoleteLittelfuse/Commercial Vehicle Products
IGNITION IGBT 12A, 410V
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Discrete Semiconductor Products
NGD8209NT4G
ObsoleteLittelfuse/Commercial Vehicle Products
IGNITION IGBT 12A, 410V
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NGD8209NT4G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 94 W |
| Supplier Device Package | TO-252 (DPAK) |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 445 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NGD8209NT4G Series
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
Documents
Technical documentation and resources
No documents available