Discrete Semiconductor Products

SI8467DB-T2-E1

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8467DB-T2-E1

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	475 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	780 mW, 1.8 W
Rds On (Max)	73 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Gate Charge (Max)	Package Name	Package / Case	Rds On (Max)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI8467DB-T2-E1	1.8 W 780 mW	475 pF	Surface Mount	21 nC	4-Microfoot	4-XFBGA CSPBGA	73 mOhm	12 V	2.5 V	4.5 V	MOSFET (Metal Oxide)	20 V	1.5 V	P-Channel	-55 °C	150 °C	2.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available