Discrete Semiconductor Products

SI8467DB-T2-E1

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8467DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	475 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max)	1.8 W, 780 mW
Rds On (Max) @ Id, Vgs	73 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI8467DB-T2-E1	4-XFBGA CSPBGA	20 V	1.8 W 780 mW	Surface Mount	1.5 V	MOSFET (Metal Oxide)	4-Microfoot	475 pF	2.5 A	-55 °C	150 °C	73 mOhm	P-Channel	12 V	21 nC	2.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available