Discrete Semiconductor Products

NTF6P02T3G

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POWER MOSFET, P CHANNEL, 20 V, 10 A, 0.05 OHM, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 20 V, 10 A, 0.05 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTF6P02T3G

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Single P-Channel Logic Level Power MOSFET -20V -10A 50mΩ

Part	Package / Case	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor NTF6P02T3G	TO-261-4 TO-261AA	8 V	P-Channel	20 nC	1 V	2.5 V 4.5 V	SOT-223 (TO-261)	Surface Mount	50 mOhm	1200 pF	20 V	10 A	-55 °C	150 °C	MOSFET (Metal Oxide)

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General part information

Power MOSFET -20V -10A 50 mΩ Single P-Channel SOT-223 Logic Level

Technical documentation and resources