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RD3H200SNTL1

Discrete Semiconductor Products

RD3H200SNTL1

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Rohm Semiconductor

MOSFET, N-CH, 45V, 20A, 150DEG C, 20W

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Search across all available documentation for this part.

DocumentsReport of SVHC under REACH Regulation RD3H200SN ESD Data +36

RD3H200SNTL1

Discrete Semiconductor Products

RD3H200SNTL1

Active

Rohm Semiconductor

MOSFET, N-CH, 45V, 20A, 150DEG C, 20W

Deep-Dive with AI

DocumentsReport of SVHC under REACH Regulation RD3H200SN ESD Data +36

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3H200SNTL1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	45 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2907	$ 1.57
Newark	Each (Supplied on Cut Tape)	1	$ 1.55
		10	$ 1.20
		25	$ 1.08
		50	$ 0.97
		100	$ 0.86
		250	$ 0.77
		500	$ 0.69
		1000	$ 0.64

Description

General part information

RD3H200SN Series

RD3H200SN is a Power MOSFET with Low on - resistance, suitable for Switching.

Documents

Technical documentation and resources

Report of SVHC under REACH Regulation

Environmental Data

RD3H200SN ESD Data

Characteristics Data

Types and Features of Transistors

Application Note

Notes for Temperature Measurement Using Thermocouples

RD3H200SN Data Sheet

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Two-Resistor Model for Thermal Simulation

Notes for Calculating Power Consumption:Static Operation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

TO-252_TL1 Taping Information

Package Information

Basics of Thermal Resistance and Heat Dissipation

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Method for Monitoring Switching Waveform

Schematic Design & Verification

Package Dimensions

Package Information

Reliability Test Result

Manufacturing Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Precautions When Measuring the Rear of the Package with a Thermocouple

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

About Export Regulations

Export Information

How to Use LTspice® Models

Schematic Design & Verification

What Is Thermal Design

Anti-Whisker formation - Transistors

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

What is a Thermal Model? (Transistor)

List of Transistor Package Thermal Resistance

PCB Layout Thermal Design Guide

How to Create Symbols for PSpice Models

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Compliance of the RoHS directive

Environmental Data

Part Explanation

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

RD3H200SN Series

Nch 45V 20A Power MOSFET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Rohm Semiconductor RD3H200SNTL1	150 °C	-55 °C	12 nC	28 mOhm	4 V	10 V	TO-252	Surface Mount	45 V	950 pF	2.5 V	20 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	N-Channel	20 A	20 V