Discrete Semiconductor Products

PBLS1503Y,115

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TRANS PREBIAS 1NPN 1PNP 6TSSOP

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Discrete Semiconductor Products

Active

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS1503Y,115

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	150, 30
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	6-TSSOP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	15 V

Part	Supplier Device Package	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Resistor - Emitter Base (R2)	Transistor Type	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	Mounting Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Min]
Freescale Semiconductor - NXP PBLS1503Y,115	6-TSSOP	300 mW	6-TSSOP SC-88 SOT-363	150 mV 250 mV	30 150	280 MHz	10 kOhms	1 NPN Pre-Biased 1 PNP	100 nA	1 µA	Surface Mount	100 mA 500 mA	50 V	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount 6-TSSOP

Technical documentation and resources

No documents available