Discrete Semiconductor Products

PSMN8R7-80BS,118

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MOSFET N-CH 80V 90A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 80V 90A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R7-80BS,118

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3346 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	8.7 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN8R7-80PS,127	MOSFET (Metal Oxide)	TO-220AB	80 V	TO-220-3	-55 °C	175 ░C	90 A	170 W	N-Channel	52 nC	Through Hole	3346 pF	20 V	8.7 mOhm	10 V
Freescale Semiconductor - NXP PSMN8R7-80BS,118	MOSFET (Metal Oxide)	D2PAK	80 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	90 A	170 W	N-Channel	52 nC	Surface Mount	3346 pF	20 V	8.7 mOhm	10 V

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General part information

N-Channel 80 V 90A (Tc) 170W (Tc) Surface Mount D2PAK

Technical documentation and resources