Discrete Semiconductor Products

PJP100P03_T0_00001

Obsolete

30V P-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJP100P03_T0_00001

Current - Continuous Drain (Id) @ 25°C	100 A, 15.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	107 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6067 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	119 W, 2 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJP100P03_T0_00001	TO-220-3	2 W 119 W	30 V	20 V	6067 pF	Through Hole	5 mOhm	TO-220AB	2.5 V	107 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	P-Channel	4.5 V 10 V	15.8 A 100 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 30 V 15.8A (Ta), 100A (Tc) 2W (Ta), 119W (Tc) Through Hole TO-220AB

Technical documentation and resources