Specification	NTB85N03T4G

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	28 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTB85N03 Series

Power MOSFET 85 Amps, 28 Volts

Part	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor NTB85N03G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	80 W	-55 °C	150 °C	29 nC	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK	3 V	2150 pF	N-Channel	6.8 mOhm	85 A	28 V	20 V
ON Semiconductor NTB85N03T4G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	80 W	-55 °C	150 °C	29 nC	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK	3 V	2150 pF	N-Channel	6.8 mOhm	85 A	28 V	20 V
ON Semiconductor NTB85N03T4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.