Discrete Semiconductor Products

NTMD5838NLR2G

Obsolete

POWER MOSFET 40V 8.9A 20 MOHM DUAL N-CHANNEL SO-8 LOGIC LEVEL

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Discrete Semiconductor Products

Obsolete

POWER MOSFET 40V 8.9A 20 MOHM DUAL N-CHANNEL SO-8 LOGIC LEVEL

Technical Specifications

Parameters and characteristics for this part

Specification	NTMD5838NLR2G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Power MOSFET 40V 8.9A 20 mOhm Dual N-Channel SO-8 Logic Level

Part	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTMD5838NLR2G	8-SOIC	3.9 mm	0.154 in	2.1 W	25 mOhm	Surface Mount	2 N-Channel (Dual)	785 pF	Logic Level Gate	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C	40 V	7.4 A	17 nC	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 40 V, 8.9 A, 20 m, Dual N−Channel SO−8

Technical documentation and resources