Specification	NSB13211DW6T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Max]	35 hFE
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15 hFE
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	230 mW
Resistor - Base (R1)	4.7 kOhms, 10 kOhms
Supplier Device Package	SC70-6, SC-88, SOT-363
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSB13211DW6 Series

Dual Complementary Bias Resistor Transistors in SC-88

Part	Mounting Type	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Max]	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor NSB13211DW6T1G	Surface Mount	230 mW	SC-88 SC70-6 SOT-363	100 mA	500 nA	250 mV 250 mV	4.7 kOhms 10 kOhms	15 hFE	35 hFE	1 NPN 1 PNP	6-TSSOP SC-88 SOT-363	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSB13211DW6 Series

NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device.NSB13211DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications.