Discrete Semiconductor Products

NTMFD2D4N03P8

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MOSFET 2N-CH 30V 17A 8PQFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 17A 8PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD2D4N03P8

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	56 A, 84 A, 25 A, 17 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	24 nC
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3825 pF, 1715 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	25 W, 1.1 W, 1 W, 23 W
Rds On (Max) @ Id, Vgs	5 mOhm, 2.4 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V, 3 V

Part	Configuration	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max
ON Semiconductor NTMFD2D4N03P8	2 N-Channel (Dual) Asymmetrical	3 V 3 V	30 V	MOSFET (Metal Oxide)	8-PowerWDFN	1715 pF 3825 pF	Surface Mount	-55 °C	150 °C	24 nC	55 nC	8-PQFN (5x6)	2.4 mOhm 5 mOhm	17 A 25 A 56 A 84 A	1 W 1.1 W 23 W 25 W

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General part information

Mosfet Array 30V 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc) 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc) Surface Mount 8-PQFN (5x6)

Technical documentation and resources