Discrete Semiconductor Products

US6K1TR

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Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.5A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TUMT6, 6 PIN

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Search across all available documentation for this part.

DocumentsTUMT6 Part Marking TUMT6 TR Taping Spec +28

Discrete Semiconductor Products

US6K1TR

Active

Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.5A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TUMT6, 6 PIN

Deep-Dive with AI

DocumentsTUMT6 Part Marking TUMT6 TR Taping Spec +28

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	US6K1TR

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	80 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	TUMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

US6K1 Series

2.5V Drive Nch+Nch MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Mounting Type	Configuration	Drain to Source Voltage (Vdss)
Rohm Semiconductor US6K1TR	2.2 nC	1.5 V	TUMT6	Logic Level Gate	1 W	1.5 A	150 °C	240 mOhm	80 pF	MOSFET (Metal Oxide)	6-SMD Flat Leads	Surface Mount	2 N-Channel (Dual)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.58
		10	$ 0.50
		100	$ 0.35
		500	$ 0.29
		1000	$ 0.25
	Digi-Reel®	1	$ 0.58
		10	$ 0.50
		100	$ 0.35
		500	$ 0.29
		1000	$ 0.25
	Tape & Reel (TR)	3000	$ 0.17
Newark	Each	1	$ 0.87
		10	$ 0.52
		100	$ 0.35
		500	$ 0.28
		1000	$ 0.26
		2500	$ 0.23
		10000	$ 0.19

Description

General part information

US6K1 Series

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.