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16-QFN, MDP
Integrated Circuits (ICs)

ISL6610IRZ-T

Obsolete
Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 16QFN

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16-QFN, MDP
Integrated Circuits (ICs)

ISL6610IRZ-T

Obsolete
Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 16QFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationISL6610IRZ-T
Channel TypeSynchronous
Current - Peak Output (Source, Sink)4 A
Current - Peak Output (Source, Sink)-
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers4
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case16-VQFN Exposed Pad
Rise / Fall Time (Typ) [custom]8 ns
Rise / Fall Time (Typ) [custom]8 ns
Supplier Device Package16-QFN (4x4)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ISL6610 Series

The ISL6610, ISL6610A integrates two ISL6609, ISL6609A drivers with enable function removed and is optimized to drive two independent power channels in a synchronous rectified buck converter topology. These drivers, combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller, form a complete high efficiency voltage regulator at high switching frequency. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6610, ISL6610A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6610, ISL6610A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6610As bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.

Documents

Technical documentation and resources