Discrete Semiconductor Products

IXFX27N80Q

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFX27N80Q

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH HIPERFET-Q CLASS TO-247AD/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX27N80Q

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	7600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXFX27N80Q Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type
Littelfuse/Commercial Vehicle Products IXFX27N80Q	27 A	500 W	170 nC	PLUS247™-3	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	10 V	TO-247-3 Variant	4.5 V	7600 pF	800 V	20 V	320 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 27.64
		10	$ 20.16
Newark	Each	250	$ 17.71

Description

General part information

IXFX27N80Q Series

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings

Documents

Technical documentation and resources