Discrete Semiconductor Products

PMN27XPEA,115

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MOSFET P-CH 4.4A 20V

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Discrete Semiconductor Products

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MOSFET P-CH 4.4A 20V

Technical Specifications

Parameters and characteristics for this part

Specification	PMN27XPEA,115

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-457, SC-74
Power Dissipation (Max)	530 mW, 8.33 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Qualification	Grade	Package / Case	Vgs (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Nexperia USA Inc. PMN27XPEA,115	2.5 V	4.5 V	AEC-Q101	Automotive	SC-74 SOT-457	12 V	Surface Mount	6-TSOP	1770 pF	MOSFET (Metal Oxide)	20 V	22.5 nC	150 °C	-55 °C	30 mOhm	P-Channel	4.4 A	1.25 V	8.33 W 530 mW

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General part information

P-Channel 20 V 4.4A (Ta) 530mW (Ta), 8.33W (Tc) Surface Mount 6-TSOP

Technical documentation and resources