Specification	SSM6N37FU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N37 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 2.2 Ω@4.5V, SOT-363(US6)

Part	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power - Max [Max]	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	FET Feature	FET Feature
Toshiba Semiconductor and Storage SSM6N37FU,LF	1 V	MOSFET (Metal Oxide)	2.2 Ohm	150 °C	12 pF	Surface Mount	250 mA	6-TSSOP SC-88 SOT-363	300 mW	US6	2 N-Channel (Dual)	20 V	Logic Level Gate	1.5 V
Toshiba Semiconductor and Storage SSM6N37CTD(TPL3)	1 V	MOSFET (Metal Oxide)	2.2 Ohm	150 °C	12 pF	Surface Mount	250 mA	6-SMD Flat Leads	140 mW	CST6D	2 N-Channel (Dual)	20 V	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.25 A, 2.2 Ω@4.5V, SOT-363(US6)

Technical documentation and resources