Discrete Semiconductor Products

PCDP0465G1_T0_00001

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TO-220AC, SIC

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Discrete Semiconductor Products

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TO-220AC, SIC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP0465G1_T0_00001

Capacitance @ Vr, F	146 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Package / Case	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Panjit International Inc. PCDP0465G1_T0_00001	650 V	40 µA	146 pF	TO-220-2	SiC (Silicon Carbide) Schottky	0 ns	1.7 V	TO-220AC	No Recovery Time	Through Hole	4 A	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 4A Through Hole TO-220AC

Technical documentation and resources

No documents available