2SC3651-TD-E

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2SC3651 - NPN EPITAXIAL PLANAR S

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Discrete Semiconductor Products

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2SC3651 - NPN EPITAXIAL PLANAR S

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3651-TD-E

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	500
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Supplier Device Package	PCP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Package / Case
ON Semiconductor 2SC3651-TD-E	500 mV	Surface Mount	PCP	100 nA	150 °C	500	150 MHz	NPN	TO-243AA
ON Semiconductor 2SC3651-TD-E	500 mV	Surface Mount	PCP	100 nA	150 °C	500	150 MHz	NPN	TO-243AA

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General part information

Bipolar (BJT) Transistor NPN 150MHz Surface Mount PCP

Technical documentation and resources

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