Discrete Semiconductor Products

LN60A01EP-LF

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MONOLITHIC POWER SYSTEMS (MPS)

MOSFET 3N-CH 600V 0.08A 8DIP

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Discrete Semiconductor Products

Active

MONOLITHIC POWER SYSTEMS (MPS)

MOSFET 3N-CH 600V 0.08A 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	LN60A01EP-LF

Configuration	3 N-Channel, Common Gate
Current - Continuous Drain (Id) @ 25°C	80 mA
Drain to Source Voltage (Vdss)	600 V
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-20 °C
Package / Case	7.62 mm
Package / Case	0.3 in, 7 Leads
Package / Case	8-DIP
Rds On (Max) @ Id, Vgs [Max]	190 Ohm
Supplier Device Package	8-PDIP-7B
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Package / Case
MONOLITHIC POWER SYSTEMS (MPS) LN60A01ES-LF-Z	80 mA	3 N-Channel Common Gate	-20 °C	125 ¯C	8-SOIC	3.9 mm	0.154 in	1.2 V	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	600 V	190 Ohm
MONOLITHIC POWER SYSTEMS (MPS) LN60A01EP-LF	80 mA	3 N-Channel Common Gate	-20 °C	125 ¯C	8-DIP			1.2 V	8-PDIP-7B	Through Hole	MOSFET (Metal Oxide)	600 V	190 Ohm	7.62 mm	0.3 in 7 Leads
MONOLITHIC POWER SYSTEMS (MPS) LN60A01ES-LF	80 mA	3 N-Channel Common Gate	-20 °C	125 ¯C	8-SOIC	3.9 mm	0.154 in	1.2 V	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	600 V	190 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 600V 80mA 1.3W Through Hole 8-PDIP-7B

Technical documentation and resources