Discrete Semiconductor Products

LN60A01EP-LF

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MOSFET 3N-CH 600V 0.08A 8DIP

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Discrete Semiconductor Products

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MOSFET 3N-CH 600V 0.08A 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	LN60A01EP-LF

Configuration	3 N-Channel, Common Gate
Current - Continuous Drain (Id) @ 25°C	80 mA
Drain to Source Voltage (Vdss)	600 V
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-20 °C
Package / Case	7 Leads, 8-DIP
Package / Case	7.62 mm
Package / Case	0.3 in
Power - Max [Max]	1.3 W
Rds On (Max) @ Id, Vgs [Max]	190 Ohm
Supplier Device Package	8-PDIP-7B
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Package / Case
Monolithic Power Systems Inc. LN60A01ES-LF-Z	80 mA	3 N-Channel Common Gate	1.2 V	125 ¯C	-20 °C	1.3 W	0.154 in	8-SOIC	3.9 mm	190 Ohm	Surface Mount	600 V	8-SOIC	MOSFET (Metal Oxide)
Monolithic Power Systems Inc. LN60A01EP-LF	80 mA	3 N-Channel Common Gate	1.2 V	125 ¯C	-20 °C	1.3 W	7.62 mm	7 Leads 8-DIP		190 Ohm	Through Hole	600 V	8-PDIP-7B	MOSFET (Metal Oxide)	0.3 in
Monolithic Power Systems Inc. LN60A01ES-LF	80 mA	3 N-Channel Common Gate	1.2 V	125 ¯C	-20 °C	1.3 W	0.154 in	8-SOIC	3.9 mm	190 Ohm	Surface Mount	600 V	8-SOIC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 600V 80mA 1.3W Through Hole 8-PDIP-7B

Technical documentation and resources