Discrete Semiconductor Products

2N7000RLRAG

Obsolete

ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 200MA, 5 Ω

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Discrete Semiconductor Products

2N7000RLRAG

Obsolete

ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 200MA, 5 Ω

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N7000RLRAG

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

2N7000 Series

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor 2N7000RLRA	60 V	TO-92	TO-226	20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel	350 mW	4.5 V 10 V	Formed Leads TO-226-3 TO-92-3 Long Body	Through Hole	200 mA	-55 °C	150 °C	60 pF
ON Semiconductor 2N7000BU_T	60 V	TO-92-3		20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel		4.5 V 10 V	TO-226-3 TO-92-3	Through Hole	200 mA	-55 °C	150 °C	50 pF	400 mW
ON Semiconductor 2N7000RLRAG	60 V	TO-92	TO-226	20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel	350 mW	4.5 V 10 V	Formed Leads TO-226-3 TO-92-3 Long Body	Through Hole	200 mA	-55 °C	150 °C	60 pF
ON Semiconductor 2N7000G	60 V	TO-92	TO-226	20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel	350 mW	4.5 V 10 V	TO-226-3 TO-92-3 Long Body	Through Hole	200 mA	-55 °C	150 °C	60 pF
ON Semiconductor 2N7000RLRMG	60 V	TO-92	TO-226	20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel	350 mW	4.5 V 10 V	Formed Leads TO-226-3 TO-92-3 Long Body	Through Hole	200 mA	-55 °C	150 °C	60 pF
ON Semiconductor 2N7000	60 V	TO-92-3		20 V	MOSFET (Metal Oxide)	3 V	5 Ohm	N-Channel		4.5 V 10 V	TO-226-3 TO-92-3	Through Hole	200 mA	-55 °C	150 °C	50 pF	400 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N7000 Series

These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.

Documents

Technical documentation and resources