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ONSEMI BD13916STU
Discrete Semiconductor Products

BD13916STU

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 1.5 A, 1.25 W, TO-126, THROUGH HOLE

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ONSEMI BD13916STU
Discrete Semiconductor Products

BD13916STU

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 1.5 A, 1.25 W, TO-126, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

SpecificationBD13916STU
Current - Collector (Ic) (Max) [Max]1.5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]1.25 W
Supplier Device PackageTO-126-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.66
60$ 0.55
120$ 0.40
540$ 0.33
1020$ 0.28
2040$ 0.25
5040$ 0.24
10020$ 0.22
NewarkEach 1$ 0.85
10$ 0.63
100$ 0.44
500$ 0.37
1000$ 0.32
3840$ 0.29
11520$ 0.27
ON SemiconductorN/A 1$ 0.23

Description

General part information

BD13916 Series

This series of plastic, NPN Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.