Discrete Semiconductor Products

UNRF2A100A

Obsolete

TRANS PREBIAS NPN 50V ML3-N2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V ML3-N2

Technical Specifications

Parameters and characteristics for this part

Specification	UNRF2A100A

Current - Collector (Ic) (Max) [Max]	80 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	35
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	ML3-N2
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Resistor - Emitter Base (R2)	Supplier Device Package
Panasonic Electronic Components UNRF2A100A	100 mW	500 nA	NPN - Pre-Biased	SC-101 SOT-883	50 V	80 mA	10 kOhms	250 mV	150 MHz	35	Surface Mount	10 kOhms	ML3-N2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 150 MHz 100 mW Surface Mount ML3-N2

Technical documentation and resources