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Technical Specifications
Parameters and characteristics for this part
| Specification | PCFG75T65SQF |
|---|---|
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 128 nC |
| IGBT Type | Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Die |
| Supplier Device Package | Wafer |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PCFG75T65SQF Series
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter and UPS applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources