Discrete Semiconductor Products

KSA1156YS

LTB

TRANSISTOR, PNP, -400V, -0.5A, TO-126-3

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Discrete Semiconductor Products

LTB

TRANSISTOR, PNP, -400V, -0.5A, TO-126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1156YS

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSA1156OSTU	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	60 hFE
ON Semiconductor KSA1156OS	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	60 hFE
ON Semiconductor KSA1156YS	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	100 hFE
ON Semiconductor KSA1156OS	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	60 hFE
ON Semiconductor KSA1156YSTSTU	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	100 hFE
ON Semiconductor KSA1156OSTSTU	TO-126-3 TO-225AA	PNP	1 V	100 µA	TO-126-3	400 V	Through Hole	150 °C	500 mA	1 W	60 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 400 V 500 mA 1 W Through Hole TO-126-3

Technical documentation and resources