Discrete Semiconductor Products

6A01-G

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DIODE GEN PURP 100V 6A R-6

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Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A01-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	R-6, Axial
Package Name	R-6
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max)	1 V

Part	Current - Reverse Leakage	Package Name	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Technology	Voltage - Forward (Vf) (Max)	Capacitance	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max)
Comchip Technology 6A01B-G	10 µA	R-6	6 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Standard	1 V	100 pF	125 °C	-55 °C	Through Hole	Axial R-6	100 V
Comchip Technology 6A01-G	10 µA	R-6	6 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Standard	1 V	100 pF	125 °C	-55 °C	Through Hole	Axial R-6	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 100 V 6A Through Hole R-6

Technical documentation and resources

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