Discrete Semiconductor Products

KSC2785YTA

Obsolete

TRANS NPN 50V 0.15A TO92S

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Discrete Semiconductor Products

Obsolete

TRANS NPN 50V 0.15A TO92S

Technical Specifications

Parameters and characteristics for this part

Specification	KSC2785YTA

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 Short Body
Power - Max [Max]	250 mW
Supplier Device Package	TO-92S
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type
ON Semiconductor KSC2785YBU	NPN	TO-92S	150 mA	TO-226-3 TO-92-3 Short Body	300 MHz	50 V	120	250 mW	100 nA	150 °C	Through Hole
ON Semiconductor KSC2785LTA	NPN	TO-92S	150 mA	TO-226-3 TO-92-3 Short Body	300 MHz	50 V	350	250 mW	100 nA	150 °C	Through Hole
ON Semiconductor KSC2785YTA	NPN	TO-92S	150 mA	TO-226-3 TO-92-3 Short Body	300 MHz	50 V	120	250 mW	100 nA	150 °C	Through Hole
ON Semiconductor KSC2785YBU	NPN	TO-92S	150 mA	TO-226-3 TO-92-3 Short Body	300 MHz	50 V	120	250 mW	100 nA	150 °C	Through Hole
ON Semiconductor KSC2785YTA	NPN	TO-92S	150 mA	TO-226-3 TO-92-3 Short Body	300 MHz	50 V	120	250 mW	100 nA	150 °C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 300MHz 250 mW Through Hole TO-92S

Technical documentation and resources