Discrete Semiconductor Products

SH8M4TB1

Obsolete

MOSFET N/P-CH 30V 9A/7A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 9A/7A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M4TB1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	9 A, 7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Package / Case	Package / Case	Mounting Type	Operating Temperature	FET Feature
Rohm Semiconductor SH8M4TB1	30 V	MOSFET (Metal Oxide)	15 nC	2.5 V	1190 pF	18 mOhm	2 W	8-SOP	7 A 9 A	N and P-Channel	0.154 in	8-SOIC	3.9 mm	Surface Mount	150 °C	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.66

General part information

Mosfet Array 30V 9A, 7A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available