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14-SOIC
Integrated Circuits (ICs)

TPS2331IDR

Active
Texas Instruments

3-V TO 13-V HOT SWAP CONTROLLER WITH ACTIVE HIGH ENABLE

14-SOIC
Integrated Circuits (ICs)

TPS2331IDR

Active
Texas Instruments

3-V TO 13-V HOT SWAP CONTROLLER WITH ACTIVE HIGH ENABLE

Technical Specifications

Parameters and characteristics for this part

SpecificationTPS2331IDR
ApplicationsGeneral Purpose
Current - Supply500 µA
FeaturesUVLO, Latched Fault
Internal Switch(s)False
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case14-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Programmable FeaturesCircuit Breaker, Slew Rate, Fault Timeout
TypeHot Swap Controller
Voltage - Supply [Max]13 V
Voltage - Supply [Min]3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 1.65
5000$ 1.58
Texas InstrumentsLARGE T&R 1$ 2.48
100$ 2.17
250$ 1.52
1000$ 1.23

Description

General part information

TPS2331 Series

The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications.

The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation. An internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pump controls both the rise times and fall times (dV/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period.

DISCH –DISCH should be connected to the source of the external N-channel MOSFET transistor connected to GATE. This pin discharges the load when the MOSFET transistor is disabled. They also serve as reference-voltage connection for internal gate-voltage-clamp circuitry.