Discrete Semiconductor Products

PJA3439_R1_00001

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3439_R1_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	51 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Grade	Qualification	Vgs (Max)
Panjit International Inc. PJA3439-AU_R1_000A1	P-Channel	SC-59 SOT-23-3 TO-236-3	300 mA	SOT-23	1.1 nC	Surface Mount	2.5 V	500 mW	MOSFET (Metal Oxide)	10 V	2.5 V	4 Ohm	51 pF	-55 °C	150 °C	60 V	Automotive	AEC-Q101	20 V
Panjit International Inc. PJA3439_R1_00001	P-Channel	SC-59 SOT-23-3 TO-236-3	300 mA	SOT-23	1.1 nC	Surface Mount	2.5 V	500 mW	MOSFET (Metal Oxide)	10 V	2.5 V	4 Ohm	51 pF	-55 °C	150 °C	60 V			20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 300mA (Ta) 500mW (Ta) Surface Mount SOT-23

Technical documentation and resources