Discrete Semiconductor Products

85EPF04

Obsolete

DIODE GEN PURP 400V 85A POWIRTAB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 400V 85A POWIRTAB

Technical Specifications

Parameters and characteristics for this part

Specification	85EPF04

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	PowIRtab™, PowerTab™
Reverse Recovery Time (trr)	190 ns
Speed	200 mA, 500 ns
Supplier Device Package	PowIRtab™
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division 85EPF04	150 °C	-40 °C	PowerTab™ PowIRtab™	100 µA	PowIRtab™	Standard	Chassis Mount	85 A	190 ns	200 mA 500 ns	1.3 V	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 85A Chassis Mount PowIRtab™

Technical documentation and resources