Specification	FDMC510P

Current - Continuous Drain (Id) @ 25°C	12 A, 18 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	116 nC
Input Capacitance (Ciss) (Max) @ Vds	7860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 41 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

FDMC510P Series

MOSFET, Power, 20V P-Channel, MLP 3.3x3.3

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDMC510P	1 V	1.5 V 4.5 V	-55 °C	150 °C	12 A 18 A	7860 pF	8 V	8 mOhm	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	2.3 W 41 W	8-MLP (3.3x3.3)	8-PowerWDFN	116 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power MOSFET, 20V P-Channel, 8mΩ @ 4.5V, 50A, MLP 3.3x3.3

Technical documentation and resources