Specification	NTP65N02RG

Current - Continuous Drain (Id) @ 25°C	58 A, 7.6 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	62.5 W, 1.04 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTX60N02R Series

Power MOSFET 24V, 65 A, N-Channel D2PAK, & TO-220

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor NTP65N02RG	20 V	25 V	1330 pF	Through Hole	4.5 V 10 V	TO-220-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	10.5 mOhm	1.04 W 62.5 W	TO-220	7.6 A 58 A	9.5 nC	2 V
ON Semiconductor NTP65N02R	20 V	25 V	1330 pF	Through Hole	4.5 V 10 V	TO-220-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	10.5 mOhm	1.04 W 62.5 W	TO-220	7.6 A 58 A	9.5 nC	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 65 A, 24 V N-Channel D2PAK, TO-220

Technical documentation and resources