Discrete Semiconductor Products

PMZB150UNEYL

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MOSFET N-CH 20V 1.5A DFN1006B-3

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Discrete Semiconductor Products

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MOSFET N-CH 20V 1.5A DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB150UNEYL

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	93 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	350 mW, 6.25 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type
Freescale Semiconductor - NXP PMZB150UNEYL	6.25 W 350 mW	3-XFDFN	1.6 nC	93 pF	1.5 A	DFN1006B-3	20 V	950 mV	-55 °C	150 °C	1.5 V 4.5 V	MOSFET (Metal Oxide)	8 V	Surface Mount	200 mOhm	N-Channel

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General part information

N-Channel 20 V 1.5A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources