Specification	FDP8447L

Current - Continuous Drain (Id) @ 25°C	12 A, 50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W, 2 W
Rds On (Max) @ Id, Vgs	8.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDP8447L Series

N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor FDP8447L	2500 pF	10 V 49 nC	TO-220-3	-55 °C	150 °C	12 A 50 A	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	40 V	TO-220-3	2 W 60 W	Through Hole	3 V	N-Channel	8.7 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDP8447L Series

This N-Channel MOSFET has been produced using a proprietary PowerTrench technology to deliver low rDS(on)and optimized BVDSScapability to offer superior performance benefit in the application.