Specification	NSB4904DW1T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SC70-6, SC-88, SOT-363
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSB4904DW1 Series

Complementary Bipolar Digital Transistor (BRT)

Part	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]
ON Semiconductor NSB4904DW1T1G	47 kOhms	500 nA	1 NPN 1 PNP	250 mW	47000 Ohms	Surface Mount	250 mV	SC-88 SC70-6 SOT-363	50 V	80	6-TSSOP SC-88 SOT-363	100 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSB4904DW1 Series

The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the NSB4904DW1T1G and NSB4904DW1T2G, two complementary devices are housed in the SC-88/SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.