Discrete Semiconductor Products

SIHF5N50D-E3

LTB

MOSFET N-CH 500V 5.3A TO220

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 5.3A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF5N50D-E3

Current - Continuous Drain (Id) (Tc)	5.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	325 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	30 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
Vishay Dale SIHF5N50D-E3	5.3 A	325 pF	TO-220-3 Full Pack	Through Hole	5 V	TO-220 Full Pack	500 V	-55 °C	150 °C	1.5 Ohm	20 nC	N-Channel	MOSFET (Metal Oxide)	10 V	30 V	30 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.60	1m+
	Tube	1000	$ 0.58	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 5.3A (Tc) 30W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources