Discrete Semiconductor Products

TSC5304EDCHC5G

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TRANS NPN 400V 4A TO251

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Discrete Semiconductor Products

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TRANS NPN 400V 4A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSC5304EDCHC5G

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	250 µA
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]	35 W
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Taiwan Semiconductor Corporation TSC5304EDCP ROG	Surface Mount	400 V	35 W	4 A	150 °C	250 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPN	TO-252 (DPAK)	1.5 V
Taiwan Semiconductor Corporation TSC5304EDCHC5G	Through Hole	400 V	35 W	4 A	150 °C	250 µA	IPAK TO-251-3 Short Leads TO-251AA	NPN	TO-251	1.5 V	IPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 35 W Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available