Discrete Semiconductor Products

V12PM12-M3/86A

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DIODE SCHOTTKY 120V 12A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 12A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V12PM12-M3/86A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Grade	Qualification
Vishay General Semiconductor - Diodes Division V12PM12-M3/86A	500 µA	800 mV	200 mA 500 ns	12 A	Surface Mount	Schottky	120 V	150 °C	-40 °C	TO-277A (SMPC)	3-PowerDFN TO-277
Vishay General Semiconductor - Diodes Division V12PM12HM3_A/H	500 µA	830 mV	200 mA 500 ns	4.1 A	Surface Mount	Schottky	120 V	150 °C	-40 °C	TO-277A (SMPC)	3-PowerDFN TO-277	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division V12PM12-M3/87A	500 µA	800 mV	200 mA 500 ns	12 A	Surface Mount	Schottky	120 V	150 °C	-40 °C	TO-277A (SMPC)	3-PowerDFN TO-277

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General part information

Diode 120 V 12A Surface Mount TO-277A (SMPC)

Technical documentation and resources