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ISL95808 Functional Diagram
Integrated Circuits (ICs)

ISL95808IRZ-T

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Renesas Electronics Corporation

HIGH VOLTAGE SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVER

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ISL95808 Functional Diagram
Integrated Circuits (ICs)

ISL95808IRZ-T

Active
Renesas Electronics Corporation

HIGH VOLTAGE SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationISL95808IRZ-T
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]2 A
Current - Peak Output (Source, Sink) [custom]2 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]33 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]8 ns
Rise / Fall Time (Typ) [custom]8 ns
Supplier Device Package8-DFN (2x2)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 6000$ 1.77

Description

General part information

ISL95808 Series

The ISL95808 is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high efficiency and excellent thermal performance. The driver, combined with an Intersil multiphase Buck PWM controller, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. The ISL95808 features a 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies. The ISL95808 also features a three-state PWM input. This PWM input, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using the ISL95808. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing for the use of higher performance MOSFETs. Adaptive shoot--through protection is integrated to prevent both MOSFETs from conducting simultaneously. A diode emulation feature is integrated in the ISL95808 to enhance converter efficiency at light load conditions. This feature also allows for monotonic start-up into prebiased outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turning off the low-side MOSFET gate. The ISL95808 also features very low shutdown supply current (5V, 3μA) to ensure the low power consumption.

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Technical documentation and resources