Discrete Semiconductor Products

FDD6796

Obsolete

MOSFET N-CH 25V 20A/40A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 20A/40A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDD6796

Current - Continuous Drain (Id) @ 25°C	40 A, 20 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	2315 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.7 W, 42 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD6796	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.7 mOhm	-55 °C	175 ░C	20 V	N-Channel	41 nC	Surface Mount	25 V	4.5 V 10 V	2315 pF	MOSFET (Metal Oxide)	3 V	3.7 W 42 W	TO-252 (DPAK)	20 A 40 A
ON Semiconductor FDD6796	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.7 mOhm	-55 °C	175 ░C	20 V	N-Channel	41 nC	Surface Mount	25 V	4.5 V 10 V	2315 pF	MOSFET (Metal Oxide)	3 V	3.7 W 42 W	TO-252AA	20 A 40 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 20A (Ta), 40A (Tc) 3.7W (Ta), 42W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources