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TO-247-3
Discrete Semiconductor Products

FGY100T120SWD

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ON Semiconductor

1200V, 100A FIELD STOP VII (FS7) DISCRETE IGBT IN POWER TO247-3L PACKAGING

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TO-247-3
Discrete Semiconductor Products

FGY100T120SWD

Active
ON Semiconductor

1200V, 100A FIELD STOP VII (FS7) DISCRETE IGBT IN POWER TO247-3L PACKAGING

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFGY100T120SWD
Current - Collector (Ic) (Max) [Max]200 A
Current - Collector Pulsed (Icm)400 A
Gate Charge284 nC
IGBT TypeField Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power - Max [Max]866 W
Reverse Recovery Time (trr)152 ns
Supplier Device PackageTO-247-3
Switching Energy3.1 mJ, 1.6 mJ
Td (on/off) @ 25°C46.4 ns
Td (on/off) @ 25°C209.6 ns
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 450$ 6.23
NewarkEach 250$ 6.26
500$ 6.08
ON SemiconductorN/A 1$ 5.96

Description

General part information

FGY100T120SWD Series

Using the novel field stop 7thgeneration IGBT technology and the Gen7 Diode in TP247 3-lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS and ESS.

Documents

Technical documentation and resources