Discrete Semiconductor Products

EMZ1FHAT2R

NRND

PNP+NPN GENERAL PURPOSE AMPLIFIC

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

PNP+NPN GENERAL PURPOSE AMPLIFIC

Technical Specifications

Parameters and characteristics for this part

Specification	EMZ1FHAT2R

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz, 140 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Qualification	AEC-Q101
Supplier Device Package	EMT6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	400 mV, 500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Supplier Device Package	Grade	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Package / Case	Operating Temperature
Rohm Semiconductor EMZ1FHAT2R	1 NPN 1 PNP	EMT6	Automotive	140 MHz 180 MHz	150 mA	100 nA	400 mV 500 mV	AEC-Q101	120	50 V	Surface Mount	SOT-563 SOT-666	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 180MHz, 140MHz 150mW Surface Mount EMT6

Technical documentation and resources

No documents available