Discrete Semiconductor Products

NTHD3101FT3G

Obsolete

MOSFET P-CH 20V 3.2A CHIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 3.2A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	NTHD3101FT3G

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs [Max]	80 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
ON Semiconductor NTHD3101FT3G	1.8 V 4.5 V	P-Channel	20 V	ChipFET™	680 pF	8 V	3.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	Surface Mount	80 mOhm	Schottky Diode (Isolated)	7.4 nC	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™

Technical documentation and resources