VS-GA200TH60S

Obsolete

IGBT MOD 600V 260A INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 600V 260A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GA200TH60S

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	260 A
Current - Collector Cutoff (Max) [Max]	5 µA
Input	Standard
Input Capacitance (Cies) @ Vce	13.1 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Double INT-A-PAK (3 + 4)
Power - Max [Max]	1042 W
Supplier Device Package	Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Configuration	Input	Vce(on) (Max) @ Vge, Ic
Vishay General Semiconductor - Diodes Division GA200SA60S	Chassis Mount	SOT-227B	600 V	630 W	SOT-227-4 miniBLOC	16.25 nF	1 mA	-55 °C	150 °C	200 A	Single	Standard	1.3 V
Vishay General Semiconductor - Diodes Division VS-GA200TH60S	Chassis Mount	Double INT-A-PAK	600 V	1042 W	Double INT-A-PAK (3 + 4)	13.1 nF	5 µA	-40 °C	150 °C	260 A	Half Bridge	Standard	1.9 V
Vishay General Semiconductor - Diodes Division GA200SA60U	Chassis Mount	SOT-227B	600 V	500 W	SOT-227-4 miniBLOC	16.5 nF	1 mA	-55 °C	150 °C	200 A	Single	Standard	1.9 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 600 V 260 A 1042 W Chassis Mount Double INT-A-PAK

Technical documentation and resources

No documents available