Discrete Semiconductor Products

BUK769R6-80E,118

Obsolete

MOSFET N-CH 80V 75A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK769R6-80E,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4682 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	182 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs (Max)
Nexperia USA Inc. BUK769R6-80E,118	MOSFET (Metal Oxide)	9.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	D2PAK	80 V	4682 pF	59.8 nC	182 W	75 A	175 °C	-55 °C	AEC-Q101	10 V	N-Channel	Surface Mount	20 V

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General part information

N-Channel 80 V 75A (Tc) 182W (Tc) Surface Mount D2PAK

Technical documentation and resources